8A 80 - 100V Schottky Rectifier Diode 8TQ80SPBF 8TQ100SPBF With D2PAK Package
FEATURES
The 8TQ .. Schottky rectifier series has been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable operation up to 175° C junction temperature.
Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse
battery protection.
* 175° C TJ operation
* High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
* Low forward voltage drop
* High frequency operation
* Guard ring for enhanced ruggedness and long term reliability
* Lead-Free ("PbF" suffix)
| MAJOR RATINGS AND CHARACTERISTICS |
| SYMBOL | CHARACTERISTICS | VALUES | UNITS |
| IF(AV) | Rectangular waveform | 8 | A |
| VRRM | | 80-100 | V |
| IFSM | @ tp = 5 μs sine | 850 | A |
| VF | @ 8 Apk, TJ = 125 °C (per leg) | 0.58 | V |
| TJ | Range | - 55 to 175 | °C |
| ABSOLUTE MAXIMUM RATINGS |
| PARAMETER | SYMBOL | TEST CONDITIONS | VALUES | UNITS |
| Maximum average per leg forward current per device | IF(AV) | 50 % duty cycle at TC = 155 °C, rectangular waveform | 5 | A |
| 10 |
| Maximum peak one cycle non-repetitive surge current per leg | IFSM | 5 μs sine or 3 μs rect. pulse | Following any rated load condition and with rated VRRM applied | 620 | A |
| 10 ms sine or 6 ms rect. pulse | 115 |
| Non-repetitive avalanche energy per leg | EAS | TJ = 25 °C, IAS = 1 A, L = 10 mH | 5 | mJ |
| Repetitive avalanche current per leg | IAR | Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical | 1 | A |
Voltage Ratings
| Part number | 8TQ080SPbF | 8TQ100SPbF |
| VR Max. DC Reverse Voltage (V) | 80 | 100 |
| VRWM Max. Working Peak Reverse Voltage (V) |
Absolute Maximum Ratings
| Parameters | 8TQ | Units | Conditions |
| IF(AV) Max. Average Forward Current | 8 | A | 50% duty cycle @ TC = 157° C, rectangular wave form |
| IFSM Max. Peak One Cycle Non-Repetitive Surge Current | 850 | A | 5μs Sine or 3μs Rect. pulse |
| 230 | 10ms Sine or 6ms Rect. pulse |
| EAS Non-Repetitive Avalanche Energy | 7.50 | mJ | TJ = 25 °C, IAS = 0.50 Amps, L = 60 mH |
| IAR Repetitive Avalanche Current | 0.50 | A | Current decaying linearly to zero in 1 μsec Frequency limited by TJ max. VA = 1.5 x VR typical |
Electrical Specifications
| Parameters | 8TQ | Units | Conditions |
| FM Max. Forward Voltage Drop (1) | 0.72 | V | @ 8A | TJ = 25 °C |
| 0.88 | V | @ 16A |
| 0.58 | V | @ 8A | TJ =1 25 °C |
| 0.69 | V | @ 16A |
| IRM Max. Reverse Leakage Current (1) | 0.55 | mA | TJ = 25 °C | VR = rated VR |
| 7 | mA | TJ =1 25 °C |
| CT Max. Junction Capacitance | 500 | pF | VR = 5VDC (test signal range 100Khz to 1Mhz) 25 °C |
| LS Typical Series Inductance | 8 | nH | Measured lead to lead 5mm from package body |
| dv/dt Max. Voltage Rate of Change (Rated VR) | 10000 | V/ μs | |
Thermal-Mechanical Specifications
| Parameters | 8TQ | Units | Conditions |
| TJ Max. Junction Temperature Range | -55 to 175 | °C | |
| Tstg Max. Storage Temperature Range | -55 to 175 | °C | |
| RthJC Max. Thermal Resistance Junction to Case | 2.0 | °C/W | DC operation |
| RthCS Typical Thermal Resistance, Case to Heatsink | 0.50 | °C/W | Mounting surface , smooth and greased |
| wt Approximate Weight | 2 (0.07) | g (oz.) | |
| T Mounting Torque | Min. | 6 (5) | Kg-cm (Ibf-in) | |
| Max. | 12 (10) | | |
Drawing:
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8A 80 - 100V Schottky Rectifier Diode 8TQ80SPBF 8TQ100SPBF With D2PAK Package Images
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